Effective work function of scandium nitride gate electrodes on SiO2 and HfO2

被引：8

作者：

Yang, HD ^{[1
]}

Heo, S ^{[1
]}

Lee, D ^{[1
]}

Choi, S ^{[1
]}

Hwang, H ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 1-3期

关键词：

ScN; gate; work function; SiO2; HfO2;

D O I：

10.1143/JJAP.45.L83

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For n-type metal-oxide-semiconductor (NMOS) devices, a metal gate with a very low effective work function (Phi(m,eff)) is necessary. In this paper, we evaluate the Phi(m,eff) values of ScNx gates on both SiO2 and atomic-layer-deposited (ALD) HfO2. The ScNx/SiO2 samples have a wide range of Phi(m,eff) values from similar to 3.9 to similar to 4.7 eV. However, the ScNx gates on HfO2 show a relatively narrow range of Phi(m,eff) values from similar to 4.5 to similar to 4.8 eV due to the Fermi level pinning (FLP) effect. The generation of oxygen vacancies may result in the extrinsic FLP near the ScNx/HfO2 interface. Therefore, ScNx is an NMOS-compatible electrode on SiO2 and the extrinsic FLP should be suppressed for NMOS devices with HfO2.

引用

页码：L83 / L85

页数：3

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