Numerical simulation of the divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic multilayer AlGaInAs/InP waveguide

被引:2
作者
Kurnosov, V. D. [1 ]
Kurnosov, K., V [1 ]
机构
[1] Open Joint Stock Co MF Stelmakh Polyus Res Inst, Ul Vvedenskogo 3,Korp 1, Moscow 117342, Russia
关键词
radiation divergence; optical confinement factor; multilayer waveguide; semiconductor laser;
D O I
10.1070/QEL17305
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic (multilayer) waveguide are numerically simulated. The reasons for the choice of the given heterostructure design are explained, and the consequences of choosing other layer structures are considered. It is shown how to choose the active waveguide thickness, the active region position on the waveguide, and the multilayer waveguide grating period.
引用
收藏
页码:816 / 821
页数:6
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