Tri-Layer Nanoindentation for Mechanical Characterization of Ultra-Low-K Dielectrics

被引：0

作者：

Xu, Tingge ^{[1
]}

Du, Yingjie ^{[1
]}

Lu, Hongbing ^{[1
]}

Liu, Xiao Hu ^{[2
]}

Shaw, Thomas M. ^{[2
]}

Bonilla, Griselda ^{[2
]}

机构：

[1] Univ Texas Dallas, Dept Mech Engn, Richardson, TX 75083 USA

[2] IBM TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY USA

来源：

2017 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC) | 2017年

关键词：

ultra-low-k dielectric; nanoindentation; thin film; tri-layer; finite element method;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently the mechanical properties of nano-porous ultra-low-k (ULK) dielectric thin films have been characterized by nanoindentation using a tri-layer sample configuration. Tetraethyl orthosilicate (TEOS) silica was coated on the fragile ULK thin film to protect it from direct contact with nanoindenter tip. In this paper, the finite element method (FEM) simulations are conducted to investigate the effect of TEOS thickness, and to propose rules to design the tri-layer sample.

引用

页数：3

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