Design and Characterization of the CLICTD Pixelated Monolithic Sensor Chip

被引：4

作者：

Kremastiotis, I. ^{[1
]}

Ballabriga, R. ^{[1
]}

Campbell, M. ^{[1
]}

Dannheim, D. ^{[1
]}

Dort, K. ^{[1
,2
]}

Egidos, N. ^{[1
,3
]}

Kroger, J. ^{[1
,4
]}

Linssen, L. ^{[1
]}

Llopart, X. ^{[1
]}

Munker, M. ^{[1
]}

Nurnberg, A. ^{[5
]}

Peric, I. ^{[5
]}

Spannagel, S. ^{[1
,6
]}

Vanat, T. ^{[1
]}

Williams, M. ^{[1
,7
]}

机构：

[1] CERN, CH-1211 Geneva, Switzerland

[2] Justus Liebig Univ Giessen, Dept Expt Phys 2, D-35390 Giessen, Germany

[3] Univ Barcelona, Doctoral Sch Engn & Appl Sci, Barcelona 08007, Spain

[4] Heidelberg Univ, Dept Phys & Astron, D-69117 Heidelberg, Germany

[5] Karlsruhe Inst Technol, D-76131 Karlsruhe, Germany

[6] DESY, D-22607 Hamburg, Germany

[7] Univ Glasgow, Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2020年 / 67卷 / 10期

关键词：

Electrodes; Detectors; Capacitance; Silicon; Substrates; Epitaxial layers; Semiconductor device measurement; Monolithic CMOS sensors; silicon pixel detectors; DETECTORS;

D O I：

10.1109/TNS.2020.3019887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel monolithic pixelated sensor and readout chip, the compact linear collider tracker detector (CLICTD) chip, is presented. The CLICTD chip was designed targeting the requirements of the silicon tracker development for the experiment at the compact linear collider (CLIC) and has been fabricated in a modified 180 nm CMOS imaging process with charge collection on a high-resistivity p-type epitaxial layer. The chip features a matrix of 16 x 128 elongated channels, each measuring 300 x 30 mu m(2). Each channel contains 8 equidistant collection electrodes and analog readout circuits to ensure prompt signal formation. A simultaneous 8-bit time-of-arrival (with 10 ns time bins) and 5-bit time-over-threshold measurement is performed on the combined digital output of the 8 subpixels in every channel. The chip has been fabricated in two process variants and characterized in laboratory measurements using electrical test pulses and radiation sources. Results show a minimum threshold between 135 and 180 e(-) and a noise of about 14 e(-) rms. The design aspects and characterization results of the CLICTD chip are presented.

引用

页码：2263 / 2272

页数：10

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