Novel properties of AZO film sputtered in Ar+H2 ambient at high temperature

被引：23

作者：

Sun Yanfeng

Liu, Weifeng

He Zhidan

Liu Shaolin

Yi, Zou Zhao

Du, Guotong ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Jililn, Peoples R China

[2] Dalian Univ Technol, Dept Phys, State Key Lab Maot Modificat Laser Ion Electron B, Dalian 116024, Liaoning, Peoples R China

来源：

VACUUM | 2006年 / 80卷 / 09期

关键词：

Ar+H-2 ambient; RF magnetron sputtering; substrate temperature;

D O I：

10.1016/j.vacuum.2005.12.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AZO (ZnO:Al) transparent conductive thin film was prepared by RF magnetron sputtering with a AZO (98 wt% ZnO2 wt% Al2O3) ceramic target in the same Ar+H-2 ambient at different substrate temperatures ranging from 100 to 300 degrees C. The mini ilium resistivity of AZO films was 7.9 x 10(-4) Omega cm at the substrate temperature of 200 degrees C. The average transmission in the visible rang was more than 90%. Scanning electron microscopy and XRD analyses showed that the surface morphology of the AZO samples altered with the increasing of the substrate temperature. AZO film prepared at 200 degrees C in the pure Ar ambient was also made as comparison about the resistivity, carrier concentration and the average crystallite size. The resistivity became about 3 times higher. The carrier concentration became lower and the average crystallite size was smaller. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：981 / 985

页数：5

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