Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis

被引:10
|
作者
Minj, Albert [1 ]
Cavalcoli, Daniela [1 ]
Cavallini, Anna [1 ]
Gamarra, Piero [2 ]
Poisson, Marie-Antoinette di Forte [2 ]
机构
[1] Univ Bologna, Dipartimento Fis & Astron, I-40127 Bologna, Italy
[2] Alcatel Thales III V Lab, F-91461 Marcoussis, France
关键词
SCANNING KELVIN PROBE; DISLOCATIONS; GAN; MICROSCOPY; EFFICIENCY;
D O I
10.1088/0957-4484/24/14/145701
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Here, we report on significant material information provided by semi-contact phase-images in a wide range of hard III-nitride surfaces. We show that the phase contrast, which is fundamentally related to the energy dissipation during tip-surface interaction, is sensitive to the crystalline nature of the material and thus could potentially be used to determine the crystalline quality of thin nitride layers. Besides, we found that the structural defects, especially threading dislocations and cracks, act as selective sites where energy mainly dissipates. Consequently, in nitrides defects with very low dimensions can actually be imaged with phase-contrast imaging.
引用
收藏
页数:7
相关论文
共 18 条
  • [1] Atomic Distribution of Transition Metals in III-Nitrides
    Nicholas, Robert W.
    Kane, Matthew H.
    ELEVENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 2011, 8123
  • [2] CONTRIBUTION TO THE QUANTITATIVE ANALYSIS OF TERNARY ALLOYS OF GROUP III-NITRIDES BY AUGER SPECTROSCOPY
    Liday, Jozef
    Ecke, Gernod
    Baumann, Tim
    Vogrincic, Peter
    Breza, Juraj
    JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS, 2010, 61 (01): : 62 - 64
  • [3] In-plane anisotropic strain of elastically and plastically deformed III-nitrides on lithium gallate
    Namkoong, Gon
    Huang, Sa
    Moseley, Michael
    Doolittle, W. Alan
    THIN SOLID FILMS, 2009, 517 (24) : 6508 - 6511
  • [4] SOME ASPECTS OF QUANTITATIVE ANALYSIS OF TERNARY ALLOYS OF GROUP III-NITRIDES BY AUGER ELECTRON SPECTROSCOPY
    Liday, Jozef
    Vogrincic, Peter
    Ecke, Gernod
    JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS, 2011, 62 (06): : 367 - 369
  • [5] Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis
    Yang, Yuxin
    Shi, Zhiming
    Zhang, Shoufeng
    Ma, Xiaobao
    Bai, Jiangxiao
    Fan, Dashuo
    Zang, Hang
    Sun, Xiaojuan
    Li, Dabing
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2023, 14 (29) : 6719 - 6725
  • [6] First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain
    Gupta, Chirag
    Tsukada, Yusuke
    Romanczyk, Brian
    Pasayat, Shubhra S.
    James, Dillon-Acker
    Ahmadi, Elaheh
    Keller, Stacia
    Mishra, Umesh K.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (03)
  • [7] Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction
    Frentrup, Martin
    Hatui, Nirupam
    Wernicke, Tim
    Stellmach, Joachim
    Bhattacharya, Arnab
    Kneissl, Michael
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (21)
  • [8] Nonlinear Dynamical analysis of an AFM tapping mode microcantilever beam
    Manoubi, I.
    Najar, F.
    Choura, S.
    Nayfeh, A. H.
    CSNDD 2012 - INTERNATIONAL CONFERENCE ON STRUCTURAL NONLINEAR DYNAMICS AND DIAGNOSIS, 2012, 1
  • [9] Dislocations/Defects analysis in III-V nitrides - a cost effective MOCVD epitaxy solution
    Saxena, P. K.
    Srivastava, P.
    Srivastava, Anshika
    JOURNAL OF CRYSTAL GROWTH, 2024, 630
  • [10] Determination of particle shape distribution of clay using an automated AFM image analysis method
    Gelinas, Veronique
    Vidal, David
    POWDER TECHNOLOGY, 2010, 203 (02) : 254 - 264