Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range

Mercaptoundecanoic acid capped-Ag nanoparticles (MUA-AgNPs) assembled on graphene oxide (GO), namely MUA-AgNPs-GO nanocomposite, was used for enhancing current-voltage (I-V) activity and stability of n-lnP based heterojunction devices. The structural, morphological and optical properties of the MUA-AgNPs-GO nanocomposite were examined by Raman spectroscopy, UV-Vis spectroscopy, transmission electron microscopy and scanning electron microscopy measurements. Besides, the Ag/MUA-AgNPs-GO/n-InP/Au-Ge heterojunction was fabricated, and working performance of the heterojunction was investigated in the temperature range of 80-320 K by steps of 20 K. The heterojunction created by the MUA-AgNPs-GO nanocomposite showed improved working performance such as better I-V characteristics, great stability and better rectifying ratio than that of our reference junction. The ideality factor and barrier height values of the junction formed with MUA-AgNPs-GO layer were found to be 1.07 eV and 0.630 eV, respectively. The experimental value of the Richardson constant was determined to be 3.82 A/cm(2) K-2 in the 80-160 K temperature range and to be 6.55 A/cm(2) K-2 in the 160-320 K temperature range. The results showed that the MUA-AgNPs-GO nanocomposite is a favorable candidate to provide modification of barrier height and to improve characteristic parameters for applications of the heterojunction devices.