Temperature Dependence of Young's Modulus of Silicon

被引：13
|
作者：
Shirai, Koun [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Nanosci & Nanotechnol Ctr, Osaka 5670047, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 08期
关键词：
INTRINSIC POINT-DEFECTS; DISLOCATION DYNAMICS; CRYSTAL-GROWTH; BEHAVIOR; STRESS; BORON; MELT;
D O I：
10.7567/JJAP.52.088002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of stress on defect formation in the crystal growth of Si is currently a controversial issue. One confusing matter is the temperature dependence of the Young's modulus. The physical meaning of this dependence has been theoretically studied in terms of the anharmonic effect of phonons. (C) 2013 The Japan Society of Applied Physics
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页数：2
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