Bolometric effect in a waveguide-integrated graphene photodetector

被引：8

作者：

Wang, Yubing ^{[1
]}

Yin, Weihong ^{[1
]}

Han, Qin ^{[1
]}

Yang, Xiaohong ^{[1
]}

Ye, Han ^{[1
]}

Lv, Qianqian ^{[1
]}

Yin, Dongdong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS B | 2016年 / 25卷 / 11期

基金：

中国国家自然科学基金;

关键词：

graphene photodetector; graphene bolometer; bolometric effect; waveguide integration; OPTICAL MODULATOR; LAYER GRAPHENE; PHOTORESPONSE; PHOTOCURRENT; TRANSISTOR; DEVICES; GATE;

D O I：

10.1088/1674-1056/25/11/118103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Graphene is an alternative material for photodetectors owing to its unique properties. These include its uniform absorption of light from ultraviolet to infrared and its ultrahigh mobility for both electrons and holes. Unfortunately, due to the low absorption of light, the photoresponsivity of graphene-based photodetectors is usually low, only a few milliamps per watt. In this letter, we fabricate a waveguide-integrated graphene photodetector. A photoresponsivity exceeding 0.11 A.W-1 is obtained which enables most optoelectronic applications. The dominating mechanism of photoresponse is investigated and is attributed to the photo-induced bolometric effect. Theoretical calculation shows that the bolometric photoresponsivity is 4.6 A.W-1. The absorption coefficient of the device is estimated to be 0.27 dB.mu m(-1).

引用

页数：4

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