Tunneling-assisted Poole-Frenkel conduction mechanism in HfO2 thin films -: art. no. 113701

被引：86

作者：

Jeong, DS ^{[1
]}

Hwang, CS

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 11期

关键词：

D O I：

10.1063/1.2135895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunneling-assisted Poole-Frenkel (TAPF) mechanism, which represents electron tunneling from a metal electrode to traps in a nearby insulator layer followed by detrapping of the electrons from the traps by virtue of a lowered potential well due to an applied electric field, is suggested in this study to precisely describe the electrical conduction behavior of a Pt/HfO2/Si capacitor. The current density versus the applied electric-field curves of the TAPF conduction show a similar electric-field dependency to that of the Poole-Frenkel (PF) conduction. However, unlike the PF mechanism, the activation energy of the leakage current density corresponds to the value of the Schottky barrier height (SBH) of a metal/insulator junction minus a lowered potential-well height by the applied electric field in the TAPF mechanism. In addition, the SBH of the Pt/HfO2 junction is calculated considering a high space-charge density (> similar to 10(18) cm(-3)) in the HfO2 layer. The measured activation energy for the electrical conduction from an atomic-layer-deposited HfO2 film is compared to the value that is expected from this model. (c) 2005 American Institute of Physics.

引用

页数：6

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