Native-oxide-based selective area growth of InP nanowires via metal-organic molecular beam epitaxy mediated by surface diffusion

被引：10

作者：

Calahorra, Yonatan ^{[1
]}

Greenberg, Yaakov ^{[1
]}

Cohen, Shimon ^{[1
]}

Ritter, Dan ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 24期

关键词：

III-V NANOWIRES; GAAS NANOWIRES; ZINC BLENDE; MECHANISM;

D O I：

10.1088/0957-4484/23/24/245603

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of InP nanowires on an InP(111) B substrate is reported. The substrate native oxide was not removed from the surface prior to growth. Nanowires were grown at 400 degrees C from gold catalysts in a selective area manner, without bulk growth. Unlike SiO2-based metal-organic molecular beam epitaxy selective area growth, the growth reported here is mediated by surface diffusion with a characteristic diffusion length of 4 mu m, about an order of magnitude larger than values for diffusion on bare substrates. A pre-growth heating treatment at 450 degrees C was found to increase the yield of nanowire nucleation from the gold catalysts.

引用

页数：9

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