Aluminum nitride deep-ultraviolet light-emitting p-n junction diodes

被引：39

作者：

Taniyasu, Yoshitaka ^{[1
]}

Kasu, Makoto ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

关键词：

AlN; MOVPE; doping; LED;

D O I：

10.1016/j.diamond.2008.02.042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reviews our work on aluminum nitride (AlN) p-n junction light-emitting diodes (LEDs). N-type AlN was obtained by Si doping, By reducing dislocation density in n-type Si-doped AlN, we achieved a room-temperature electron mobility of 426 cm(2) V-1 s(-1). We analyzed the temperature dependence of the electron mobility and how the electron mobility is limited by specific scattering mechanisms. p-type AlN was obtained by Mg doping and its acceptor ionization energy was estimated to be 630 meV. We fabricated AlN p-n junction LEDs and observed electroluminescence (EL) with a wavelength of approximately 210 nm, the shortest wavelength ever observed among semiconductors. The EL was assigned to the near-band-edge emission of AlN. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1273 / 1277

页数：5

共 13 条

[1] Device physics - A bug-beating
Khan, A
[J]. NATURE, 2006, 441 (7091) : 299 - 299
[2] THERMAL ANNEALING EFFECTS ON P-TYPE MG-DOPED GAN FILMS
NAKAMURA, S
MUKAI, T
SENOH, M
IWASA, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (2B): : L139 - L142
[3] Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate
Prinz, G. i M.
Ladenburger, A.
Schirra, M.
Feneberg, M.
Thonke, K.
Sauer, R.
Taniyasu, Y.
Kasu, M.
Makimoto, T.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)
[4] Doping of AlxGa1-xN
Stampfl, C
Van de Walle, CG
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (04) : 459 - 461
[5] An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Taniyasu, Y
Kasu, M
Makimoto, T
[J]. NATURE, 2006, 441 (7091) : 325 - 328
[6] High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%
Taniyasu, Y
Kasu, M
Kumakura, K
Makimoto, T
Kobayashi, N
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 200 (01): : 40 - 43
[7] Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm2 V-1 s-1)
Taniyasu, Y
Kasu, M
Makimoto, T
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (20) : 4672 - 4674
[8] Intentional control of n-type conduction for Si-doped AlN and AlxGa1-xN (0.42≤x<1)
Taniyasu, Y
Kasu, M
Kobayashi, N
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1255 - 1257
[9] Lattice parameters of wurtzite Al1-xSixN ternary alloys
Taniyasu, Y
Kasu, M
Kobayashi, N
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (26) : 4351 - 4353
[10] Radiation and polarization properties of free-exciton emission from AlN (0001) surface
Taniyasu, Yoshitaka
Kasu, Makoto
Makimoto, Toshiki
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (26)

← 1 2 →