10 dB small-signal graphene FET amplifier

被引：55

作者：

Andersson, M. A. ^{[1
]}

Habibpour, O. ^{[1
]}

Vukusic, J. ^{[1
]}

Stake, J. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

ELECTRONICS LETTERS | 2012年 / 48卷 / 14期

关键词：

TEMPERATURE; FREQUENCY;

D O I：

10.1049/el.2012.1347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reported is the realisation of a graphene FET microwave amplifier operating at 1 GHz, exhibiting a small-signal power gain of 10 dB and a noise figure of 6.4 dB. The amplifier utilises a matching inductor on the gate yielding a return loss of 20 dB. The design is optimised for maximum gain and the optimum noise figure is extracted by noise modelling and predicted to be close to 1 dB for the intrinsic graphene FET at this frequency. The presented results complement existing graphene FET applications and are promising for future graphene microwave circuits.

引用

页码：861 / 862

页数：2

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