Reliability of Polyimide-based Thin and Flexible Capacitors with SrTiO3

被引：0

作者：

Ishii, Yasuhiro ^{[1
]}

Mori, Toru ^{[1
]}

Shibuya, Akinobu ^{[1
]}

Takemura, Koichi ^{[1
]}

机构：

[1] NEC Corp Ltd, Device Platforms Res Labs, Kanagawa 2291198, Japan

来源：

IEEE 9TH VLSI PACKAGING WORKSHOP IN JAPAN | 2008年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Reliability of polyimide (PI)-based flexible capacitors as discrete components was evaluated. A Pt/SrTiO3 (STO)/Pt/Ti/Mo/Ti metal-insulator-metal structure is formed on PI and covered with resin. The 300-nm-thick STO layer is sputter-deposited at 400 degrees C and the dielectric constant is approximately 140. The total thickness of the capacitor is 40 mu m. Under various stresses, such as thermal cycles, high humidity, reflow process, and bending, the capacitance change is within +/- 3% and the dielectric breakdown voltage higher than 100 V is maintained. Therefore, the PI-based STO capacitors are reliable and flexible enough for practical use on and in printed circuit boards.

引用

页码：131 / 134

页数：4

共 50 条

[41] Over-molding of flexible polyimide-based electronic circuits [J].

Bakr, Mona ;

Su, Yibo ;

Rezaei, Ali ;

Bossuyt, Frederick ;

Vanfleteren, Jan .

FLEXIBLE AND PRINTED ELECTRONICS, 2021, 6 (02)

[42] The resistive switching behaviors of a flexible device based on a SrTiO3 film [J].

Chen, Yun ;

Song, Jiaxun ;

Wu, Yutong ;

Ding, Sheng ;

Hou, Pengfei ;

Song, Hongjia ;

Wang, Jinbin ;

Zhong, Xiangli .

EPL, 2019, 127 (02)

[43] Tuning dielectric properties of sputtered BaTiO3 thin film capacitors via multilayering with SrTiO3 [J].

Yan, Jing ;

Ouyang, Jun ;

Zhang, Yunxiang ;

Zhang, Wei ;

Cheng, Hongbo ;

Zhu, Hanfei ;

Liu, Chao .

FUNCTIONAL MATERIALS LETTERS, 2023, 16 (02)

[44] Integration of zinc oxide thin films with polyimide-based structures [J].

Matsumura, M ;

Bandic, Z ;

Camata, RP .

Materials, Integration and Technology for Monolithic Instruments, 2005, 869 :127-132

[45] BREAKDOWN OF GRAIN-BOUNDARY BARRIERS IN SRTIO3 CAPACITORS [J].

GAUCHER, P ;

PERRIER, RL ;

GANNE, JP .

ADVANCED CERAMIC MATERIALS, 1988, 3 (03) :273-277

[46] INFLUENCE OF ELECTRODE CONTACTS ON LEAKAGE CURRENT OF SRTIO3 CAPACITORS [J].

TAMURA, T ;

TAKAI, K ;

NOSHIRO, H ;

KIMURA, M ;

OTANI, S ;

YAMADA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A) :L1697-L1699

[47] Feasibility Study of SrRuO3/SrTiO3/SrRuO3 Thin Film Capacitors in DRAM Applications [J].

Popescu, Dan ;

Popescu, Bogan ;

Jegert, Gunther ;

Schmelzer, Sebastian ;

Boettger, Ulrich ;

Lugli, Paolo .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (06) :2130-2135

[48] Si Interposers Integrated with SrTiO3 Thin Film Decoupling Capacitors and Through-Si-Vias [J].

Takemura, Koichi ;

Ohuchi, Akira ;

Shibuya, Akinobu .

IEEE 9TH VLSI PACKAGING WORKSHOP IN JAPAN, 2008, :127-130

[49] A Polyimide-Based Flexible Optoelectrodes for Low-Noise Neural Recording [J].

Guo, Zhejun ;

Ji, Bowen ;

Wang, Minghao ;

Ge, Chaofan ;

Wang, Longchun ;

Gu, Xiaowei ;

Yang, Bin ;

Wang, Xiaolin ;

Li, Chengyu ;

Liu, Jingquan .

IEEE ELECTRON DEVICE LETTERS, 2019, 40 (07) :1190-1193

[50] Polyimide-Based Flexible Plasma Sheet and Surface Ionization Waves Propagation [J].

Sun, Yuhao ;

Zhang, Bo ;

Wang, Chenxu ;

Zhang, Guanjun .

ADVANCED ELECTRONIC MATERIALS, 2021, 7 (11)

← 1 2 3 4 5 →