N-Type Organic Field-Effect Transistor Based on Fullerene with Natural Aloe Vera/SiO2 Nanoparticles as Gate Dielectric

被引：10
作者：
Khor, Li Qian [1 ]
Cheong, Kuan Yew [1 ]
机构：
[1] Univ Sains Malaysia, Sch Mat & Minerals Resources Engn, Elect Mat Res Grp, Nibong Tebal 14300, Penang, Malaysia
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 11期
关键词：
THIN-FILM TRANSISTORS; HIGH-MOBILITY; SURFACE-ENERGY; C-60; STABILITY; INSULATORS; POLYIMIDE; TRANSPORT; PAPER;
D O I：
10.1149/2.009311jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study reports on fullerene-based organic field-effect transistor (C-60-based OFET) with a combination of solution-processable natural Aloe vera blended with 1.5 wt% of SiO2 nanoparticles as a natural gate dielectric. The natural gate dielectric is screen-printed on a glass substrate followed by thermally evaporation of a layer of C-60 semiconductor to form a bottom-gate and top-contact OFET structure. Surface energy concept has been used to justify selection of the gate dielectric and semiconductor layers. The OFET operates under open air and exhibits an effective mobility and threshold voltage of 1.110 cm(2)/V s and 0 V, respectively. After two weeks exposure in air, the parameters reduce but on/off current ratio and sub-threshold swing improve significantly. (C) 2013 The Electrochemical Society. All rights reserved.
引用
收藏
页码：P440 / P444
页数：5
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