Approach to Multigas Sensing and Modeling on Nanostructure Decorated Porous Silicon Substrates

被引:12
作者
Laminack, William I. [1 ]
Hardy, Neil [1 ]
Baker, Caitlin [1 ]
Gole, James L. [2 ]
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Mech Engn, Atlanta, GA 30332 USA
关键词
Diffusion modeling; IHSAB; gas sensors; Langmuir isotherm; sensor modeling; sensor packaging; DETECTION MATRIX; HARDNESS; SENSOR;
D O I
10.1109/JSEN.2015.2460675
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An approach to multiple gas sensing on decorated porous silicon (PS) substrates is presented. The simple microelectromechanical systems/nanoelectromechanical systems platform that we have developed facilitates the modeling of the interaction of nanostructured metal oxide islands with the analytes of interest, which are exemplified by NO and NH3. These conductometric sensors operate at room temperature and atmospheric pressure and, as they are forgiving, do not require film-based technology or lithography for their construction. We show that diffusion dominates the conductometric response. The direct response and the derivatives of this response are considered. The first derivative allows a quick evaluation of sensor response and the derivative is linear with concentration. The spectral simulations have been refined to include adsorption/desorption effects of the analyte gas and assess subsequent non-linear interface sensitivities. By including the physics of adsorption/desorption, the simulated sensor response is now a non-linear function of concentration. We model the absorption/diffusion through the use of the Langmuir absorption isotherm and find substantial agreement with experiment for the mixed analyte interactions of NH3 and NO combinations on several metal oxide decorated PS interfaces.
引用
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页码:6491 / 6497
页数:7
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