Effects of nitrogen gas ratio on magnetron sputtering deposited boron nitride films

被引：22

作者：

Wang, Chuanbin ^{[1
]}

Luo, Xiaoshuang ^{[1
]}

Zhang, Song ^{[1
,2
]}

Shen, Qiang ^{[1
]}

Zhang, Lianmeng ^{[1
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

来源：

VACUUM | 2014年 / 103卷

基金：

中国国家自然科学基金;

关键词：

N-2 ratio (f(N2)); e-BN; FTIR; XPS; IN-FLAME CRYSTALLIZATION; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATE-TEMPERATURE; STRUCTURAL-CHANGES; BN FILMS; STRESS; FULLERENES; PHASE;

D O I：

10.1016/j.vacuum.2013.12.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transformation from h-BN (boron nitride) to fullerene-like e-BN with increasing N-2 ratios (f(N2), 20-33%) has been found in a radio frequency magnetron sputtering deposition by using Fourier transform infrared spectroscopy (FTIR). X-ray photoelectron spectroscopy (XPS) examination suggests that the stoichiometric e-BN molecule contains equal numbers of sp(3) and sp(2) bonds at f(N2) = 33%. The surface morphology and corresponding roughness of as-deposited BN films were evaluated by Atomic force microscopy (AFM). (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：68 / 71

页数：4

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