Effects of nitrogen gas ratio on magnetron sputtering deposited boron nitride films

被引：22
作者：
Wang, Chuanbin [1 ]
Luo, Xiaoshuang [1 ]
Zhang, Song [1 ,2 ]
Shen, Qiang [1 ]
Zhang, Lianmeng [1 ]
机构：
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
来源：
VACUUM | 2014年 / 103卷
基金：
中国国家自然科学基金;
关键词：
N-2 ratio (f(N2)); e-BN; FTIR; XPS; IN-FLAME CRYSTALLIZATION; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATE-TEMPERATURE; STRUCTURAL-CHANGES; BN FILMS; STRESS; FULLERENES; PHASE;
D O I：
10.1016/j.vacuum.2013.12.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transformation from h-BN (boron nitride) to fullerene-like e-BN with increasing N-2 ratios (f(N2), 20-33%) has been found in a radio frequency magnetron sputtering deposition by using Fourier transform infrared spectroscopy (FTIR). X-ray photoelectron spectroscopy (XPS) examination suggests that the stoichiometric e-BN molecule contains equal numbers of sp(3) and sp(2) bonds at f(N2) = 33%. The surface morphology and corresponding roughness of as-deposited BN films were evaluated by Atomic force microscopy (AFM). (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：68 / 71
页数：4
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