The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films

Diamond films were doped by boron ion-implantation with the energy of 120 keV. The implantation dose ranged from 10(14) to 10(17) cm(-2). After the implantation, the diamond films were annealed at different temperatures (600-750 degrees C) for different times (2-15 min). Scanning Electronic Microscope, Raman and Secondary Ion Mass-spectrum were used to investigate the effect of boron ion implantation and annealing on the microstructure of the diamond films. The electrical resistivities of the diamond films were also measured. It was found that the best dose of boron ion-implantation into the diamond film was around 10(16) cm(-2). The appropriate annealing temperature and time was 700 degrees C and 2-5 min, respectively. After implantation, the resistivities were reduced to 0.1 Omega cm (almost nine orders lower than the unimplanted diamond films). These results show that boron ion implantation can be an effective way to fabricate P-type diamond films. (C) 1999 Elsevier Science B.V. All rights reserved.