Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect

被引：92

作者：

Zhou, Yu Sheng ^{[1
]}

Hinchet, Ronan ^{[2
]}

Yang, Ya ^{[1
]}

Ardila, Gustavo ^{[2
]}

Songmuang, Rudeesun ^{[3
]}

Zhang, Fang ^{[1
]}

Zhang, Yan ^{[1
]}

Han, Weihua ^{[1
]}

Pradel, Ken ^{[1
]}

Montes, Laurent ^{[2
]}

Mouis, Mireille ^{[2
]}

Wang, Zhong Lin ^{[1
,4
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] MINATEC, IMEP LAHC, F-38016 Grenoble, France

[3] Inst Neel, CEA CNRS Grp Nanophys & Semicond, F-38054 Grenoble, France

[4] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R China

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 06期

关键词：

GaN; nanowires; force sensors; piezotronic materials; BIOSENSORS; SWITCHES;

D O I：

10.1002/adma.201203263

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 +/- 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano-Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro-/nanosensor arrays or artificial skin.

引用

页码：883 / 888

页数：6

共 25 条

[1] INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN [J].

BARKER, AS ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1973, 7 (02) :743-750

[2]

Bougrov V., 2001, PROPERTIES ADV SEMIC, P1

[3] Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices [J].

Bykhovski, AD ;

Gelmont, BL ;

Shur, MS .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6332-6338

[4] EFFECT OF CONTACT DEFORMATIONS ON THE ADHESION OF PARTICLES [J].

DERJAGUIN, BV ;

MULLER, VM ;

TOPOROV, YP .

PROGRESS IN SURFACE SCIENCE, 1994, 45 (1-4) :131-143

[5] Piezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing ZnO Wire [J].

Fei, Peng ;

Yeh, Ping-Hung ;

Zhou, Jun ;

Xu, Sheng ;

Gao, Yifan ;

Song, Jinhui ;

Gu, Yudong ;

Huang, Yanyi ;

Wang, Zhong Lin .

NANO LETTERS, 2009, 9 (10) :3435-3439

[6] Equilibrium Potential of Free Charge Carriers in a Bent Piezoelectric Semiconductive Nanowire [J].

Gao, Ylfan ;

Wang, Zhong Lin .

NANO LETTERS, 2009, 9 (03) :1103-1110

[7] Strain-Gated Piezotronic Transistors Based on Vertical Zinc Oxide Nanowires [J].

Han, Weihua ;

Zhou, Yusheng ;

Zhang, Yan ;

Chen, Cheng-Ying ;

Lin, Long ;

Wang, Xue ;

Wang, Sihong ;

Wang, Zhong Lin .

ACS NANO, 2012, 6 (05) :3760-3766

[8]

Lide D. R., 2006, CRC HDB CHEM PHYS

[9] GaN-nanowhiskers:: MBE-growth conditions and optical properties [J].

Meijers, R ;

Richter, T ;

Calarco, R ;

Stoica, T ;

Bochem, HP ;

Marso, M ;

Lüth, H .

JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) :381-386

[10] Nanowire-based biosensors [J].

Patolsky, Fernando ;

Zheng, Gengfeng ;

Lieber, Charles M. .

ANALYTICAL CHEMISTRY, 2006, 78 (13) :4260-4269

← 1 2 3 →