Epitaxial Non c-Axis Twin-Free Bi2Sr2CaCu2O8+ Thin Films for Future THz Devices

被引：10

作者：

Endo, Kazuhiro ^{[1
]}

Arisawa, Shunichi ^{[2
]}

Badica, Petre ^{[3
]}

机构：

[1] Kanazawa Inst Technol, Haku San, Ishikawa 9240838, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[3] Natl Inst Mat Phys, St Atomistilor 405 A, Magurele 077125, Romania

来源：

MATERIALS | 2019年 / 12卷 / 07期

关键词：

Bi2Sr2Ca2CuO8+; non c-axis epitaxial thin films; X-ray diffraction; twins; TERAHERTZ;

D O I：

10.3390/ma12071124

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of (117) Bi2Sr2Ca2CuO8+ (Bi-2212) were grown by Molecular Organic Chemical Vapor Deposition (MOCVD) on (110) SrTiO3 and (110) LaAlO3 substrates. Substrates were vicinal with off angles up to 20 degrees. Films are 3D epitaxial and X-ray diffraction phi- scans demonstrate that, while the films grown on a flat substrate are composed of twinned grains, the films on vicinal substrate are twin-free. A higher quality is obtained if growth is performed at two temperatures: Growth starts at 550-600 degrees C and continues at 700-750 degrees C. The twin-free film grown by the two-temperature method shows a zero-resistance critical temperature of 37 and 32 K when the measuring current is applied in-plane parallel and perpendicular to [001] direction of the substrate. Twin-free non c-axis thin films are promising for fabrication of novel planar THz devices.

引用

页数：11

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