Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

被引：14

作者：

Polyakov, A. Y. ^{[1
]}

Jeon, Dae-Woo ^{[2
,3
]}

Lee, In-Hwan ^{[2
,3
]}

Smirnov, N. B. ^{[1
]}

Govorkov, A. V. ^{[1
]}

Kozhukhova, E. A. ^{[1
]}

Yakimov, E. B. ^{[4
]}

机构：

[1] Inst Rare Met, Moscow 119017, Russia

[2] Chonbuk Natl Univ, Sch Adv Mat Engn, Jeonju 561756, South Korea

[3] Chonbuk Natl Univ, Res Ctr Adv Mat Dev, Jeonju 561756, South Korea

[4] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Dist, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 08期

基金：

俄罗斯基础研究基金会;

关键词：

A-PLANE GAN; DEFECT DENSITY; HOLE TRAPS; REDUCTION; CRYSTALS;

D O I：

10.1063/1.4793630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical properties, deep traps spectra, microcathodoluminescence (MCL) spectra measurements, MCL imaging, and electron beam induced current (EBIC) imaging were performed for undoped GaN films grown by metalorganic chemical vapor deposition using maskless epitaxial lateral overgrowth on basal plane sapphire. The films showed a low dislocation density of similar to 10(8) cm(-2) in the laterally overgrown wings and an order of magnitude higher dislocation density in vertical growth seed regions, as determined by MCL and EBIC imaging. The polarity of EBIC signal measurements and the room temperature capacitance-voltage characteristics suggested that the high-dislocation-density seed regions were high-resistivity p-type, with the Fermi level pinned near E-v+ 0.4 eV, as determined by admittance spectroscopy. The wing regions were n-type, with low residual donor concentration of some 10(14) cm(-3) near the surface. The donor concentration further decreased upon movement towards the sapphire substrate. Some possible explanations of the observed effects are discussed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793630]

引用

页数：6

共 31 条

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