CdZnSSe Thin Film for Photovoltaic Device

被引：4

作者：

Deo, Soumya R. ^{[1
]}

Singh, Ajaya K. ^{[2
]}

Deshmukh, Lata ^{[1
]}

Aleksandrova, Mariya ^{[3
]}

机构：

[1] Hislop Coll, Dr Ira Nimdeokar PG & Res Ctr Chem, Nagpur 440002, Maharashtra, India

[2] Govt VYTPG Autonomous Coll, Dept Chem, Durg 491001, Chhattisgarh, India

[3] Tech Univ Sofia, Dept Microelect, Sofia, Bulgaria

来源：

MATERIALS TODAY-PROCEEDINGS | 2017年 / 4卷 / 04期

关键词：

CdZnSSe; thin films; chemical bath deposition; XRD; SEM; CHEMICAL BATH DEPOSITION; OPTICAL-PROPERTIES; QUATERNARY ALLOY; GROWTH; BANDGAP;

D O I：

10.1016/j.matpr.2017.06.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

II-VI group quaternary semiconductor alloy thin films of cadmium zinc sulfoselenide (CdZnSSe) were prepared by chemical bath deposition technique on glass substrates. The deposition was carried out with various optimized deposition parameters such as concentration of precursor ions, deposition temperature, time, pH, etc. In order to obtain homogeneous thin films, triethanolamine (TEA) was used as complexing agent. A common cationic surfactant, cetyl-trimethylammoniumbromide (CTAB) was used as a capping agent. The as-deposited thin films were annealed at different temperatures (i.e. 100 degrees, 300 degrees and 500 degrees C) and their structural and optical properties have been investigated by XRD, SEM, EDS and UV-visible optical absorption studies. The optical band gap energy was found to decrease from 2.21 to 2.01 eV, with increase in annealing temperature exhibiting a red shift. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：5537 / 5543

页数：7

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