A Microwave-Assisted Solvothermal Process to Synthesize Al-Doped ZnO Powders and its Optical and Electrical Properties

被引:0
作者
Liu, Qianqian [1 ]
Zhu, Pengli [1 ]
Li, Gang [1 ]
Guo, Qian [1 ]
Shuai Xingtian [1 ]
Sun, Rong [1 ]
Wong, Chingping [1 ,2 ]
机构
[1] Chinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R China
[2] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong 649490, Hong Kong, Peoples R China
来源
2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2016年
关键词
Optoelectronic devices; Aluminum doped zinc oxide; Microwave-assisted method; Nanostructure; THIN-FILMS; TRANSPARENT; TEMPERATURE; MORPHOLOGY;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Aluminum-doped ZnO (AZO) nanoparticles with different Al doping levels were synthesized using a microwave assisted method. The synthesized AZO crystal structure and shape were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the produced nanoparticles can be fully assigned to the hexagonal wurtzite ZnO crystalline structure. SEM results showed that the morphologies of the AZO samples were spherical-like structure, and the crystalline size of the samples decreased with the increasing Al doping levels. The doping level of the synthesized nanoparticles were analyzed by Energy Dispersive X-ray Detector (EDX), and the result showed that Al element was successfully incorporated into ZnO crystal lattice. The optical properties and electrical properties of AZO samples were researched by UV-Vis spectroscopy and four-point probe, respectively. The optical spectra show that the band of the samples are affected by Al doping levels. The resistivity of the AZO samples first decreased and then increased with increasing the Al doping content due to the changes in the electron and dopant concentrations. AZO exhibited the smallest electrical resistivity with Al doping content at 3.0 at.%,
引用
收藏
页码:468 / 472
页数:5
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