Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model

被引：0
|
作者：
Maerz, Andreas [1 ]
Bertelshofer, Teresa [1 ]
Horff, Roman [1 ]
Helsper, Martin [2 ]
Bakran, Mark-M. [1 ]
机构：
[1] Univ Bayreuth, Dept Mechatron, Ctr Energy Technol, Univ Str 30, D-95447 Bayreuth, Germany
[2] Siemens AG, Vogelweiherstr 1-15, D-90441 Nurnberg, Germany
来源：
2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE) | 2016年
关键词：
Short Circuit; Silicon Carbide (SiC); MOSFET; IGBT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper the short-circuit robustness of state of the art SiC MOSFETs is analysed and their short-circuit behaviour is compared to that of a modern IGBT. A simplified thermal model of the chip itself is used to explain the difference between the behaviour of IGBT and SiC MOSFET under short-circuit conditions. Further, this model is used to derive the requirements for short-circuit detection methods for SiC MOSFETs.
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页数：10
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