Real-time analysis of the microstructural evolution and optical properties of Cu(In,Ga)Se2 thin films as a function of Cu content

被引：20

作者：

Ranjan, Vikash ^{[1
]}

Collins, R. W. ^{[2
]}

Marsillac, Sylvain ^{[1
]}

机构：

[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA

[2] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 01期

关键词：

Cu(In; Ga)Se-2; microstructures; real-time spectroscopic ellipsometry; dielectric functions; SPECTROSCOPIC ELLIPSOMETRY; GROWTH; NUCLEATION; PRECURSOR; PHASE;

D O I：

10.1002/pssr.201105385

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of Cu(In,Ga)Se-2 with various copper contents were deposited by co-evaporation onto thermally oxidized silicon substrates. Characterization by real-time spectroscopic ellipsometry reveals clear similarities among the samples, as well as key variations with Cu content. Although all films exhibit a Volmer-Weber nucleation and similar fundamental critical point energies in the analysis of optical properties, Cu-rich films exhibit enhanced coalescence, smoother surfaces, larger grain sizes, as well as a sub-bandgap absorption which is absent in Cu-poor films. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：10 / 12

页数：3

共 13 条

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