Real-time analysis of the microstructural evolution and optical properties of Cu(In,Ga)Se2 thin films as a function of Cu content

被引:20
作者
Ranjan, Vikash [1 ]
Collins, R. W. [2 ]
Marsillac, Sylvain [1 ]
机构
[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA
[2] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 01期
关键词
Cu(In; Ga)Se-2; microstructures; real-time spectroscopic ellipsometry; dielectric functions; SPECTROSCOPIC ELLIPSOMETRY; GROWTH; NUCLEATION; PRECURSOR; PHASE;
D O I
10.1002/pssr.201105385
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of Cu(In,Ga)Se-2 with various copper contents were deposited by co-evaporation onto thermally oxidized silicon substrates. Characterization by real-time spectroscopic ellipsometry reveals clear similarities among the samples, as well as key variations with Cu content. Although all films exhibit a Volmer-Weber nucleation and similar fundamental critical point energies in the analysis of optical properties, Cu-rich films exhibit enhanced coalescence, smoother surfaces, larger grain sizes, as well as a sub-bandgap absorption which is absent in Cu-poor films. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:10 / 12
页数:3
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