Ferroelectric field effect in ultrathin SrRuO3 films

被引：104

作者：

Ahn, CH

Hammond, RH

Geballe, TH

Beasley, MR

Triscone, JM

Decroux, M

Fischer, O

Antognazza, L

Char, K

机构：

[1] UNIV GENEVA,DEPT PHYS MAT CONDENSEE,CH-1211 GENEVA 4,SWITZERLAND

[2] CONDUCTUS INC,SUNNYVALE,CA 94086

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 02期

关键词：

D O I：

10.1063/1.118203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of a ferroelectric held effect in the conducting oxide SrRuO3 using Pb(Zr0.52Ti0.48) O-3/SrRuO3 epitaxial heterostructures. Upon reversing the polarization of the ferroelectric Pb(Zr0.52Ti0.48)O-3 layer, we measured a 9% change in the resistance of a nominally 30 Angstrom SrRuO3 him at room temperature. This change was nonvolatile for a period of several days. Conductivity measurements taken between 4.2 and 300 K are consistent with n-type conduction throughout this temperature range. Hall effect measurements also yield n-type conduction, with n approximate to 2 x 10(22) electrons/cm(3), and furthermore allow us to understand quantitatively the magnitude of the observed resistivity change. (C) 1997 American Institute of Physics.

引用

页码：206 / 208

页数：3

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