Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme

被引：15

作者：

Iga, Fumitaka ^{[1
,2
]}

Yoshida, Yasuhiro ^{[1
,2
]}

Ikeda, Shoji ^{[2
,3
]}

Hanyu, Takahiro ^{[2
,3
]}

Ohno, Hideo ^{[2
,3
]}

Endoh, Tetsuo ^{[1
,2
]}

机构：

[1] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808578, Japan

[3] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

基金：

日本学术振兴会;

关键词：

Magnetic devices - Cobalt compounds - Statistics - Switching;

D O I：

10.1143/JJAP.51.02BM02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time-resolved switching characteristics of 100 x 200nm(2) size CoFeB/MgO/CoFeB-based magnetic tunnel junction (MTJ) are investigated by using the 20 GHz sampling measurement technique. We focused on the physical quantities of the time-resolved characteristics such as incubation time t(A), transit time t(B), and the standard deviations sigma V's of the period of the switching waveform. Furthermore, the dependencies of t(A) and t(B) on the applied pulse waveforms are analyzed. We found t(A) exponentially decreases as the applied voltage to MTJ increases, while t(B) remains less than two nano seconds regardless of the applied voltage. Furthermore, it is observed that the standard deviations of the waveform during t(A) is larger than that of the other periods. Finally, we discuss the switching characteristics with proposed toy model based on spin transfer torque (STT) phenomena. (C) 2012 The Japan Society of Applied Physics

引用

页数：5

共 16 条

[1] Dynamic Magnetic Intermediate State during Nanosecond Spin Transfer Switching for MgO-Based Magnetic Tunnel Junctions [J].

Aoki, Tatsuya ;

Ando, Yasuo ;

Oogane, Mikihiko ;

Naganuma, Hiroshi .

APPLIED PHYSICS EXPRESS, 2010, 3 (05)

[2] Spin transfer switching in the nanosecond regime for CoFeB/MgO/CoFeB ferromagnetic tunnel junctions [J].

Aoki, Tatsuya ;

Ando, Yasuo ;

Watanabe, Daisuke ;

Oogane, Mikihiko ;

Miyazaki, Terunobu .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (10)

[3] Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory [J].

Diao, Zhitao ;

Li, Zhanjie ;

Wang, Shengyuang ;

Ding, Yunfei ;

Panchula, Alex ;

Chen, Eugene ;

Wang, Lien-Chang ;

Huai, Yiming .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (16)

[4]

Endoh T., 2009, INT C SOL STAT DEV M, P1394

[5]

Ikeda S, 2010, NAT MATER, V9, P721, DOI [10.1038/NMAT2804, 10.1038/nmat2804]

[6] Magnetic tunnel junctions for spintronic memories and beyond [J].

Ikeda, Shoji ;

Hayakawa, Jun ;

Lee, Young Min ;

Matsukura, Futnihifo ;

Ohno, Yuzo ;

Hanyu, Takahiro ;

Ohno, Hideo .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (05) :991-1002

[7] RETRACTED: Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction (Retracted article. See vol. 4, artn no. 019201, 2011) [J].

Jiang, Lixian ;

Naganuma, Hiroshi ;

Oogane, Mikihiko ;

Ando, Yasuo .

APPLIED PHYSICS EXPRESS, 2009, 2 (08)

[8]

Kamiyanagi M, 2010, IEICE T ELECTRON, VE93C, P602, DOI [10.1587/transele.E93.C.602, 10.1587/transele.E93.C602]

[9] Time-resolved reversal of spin-transfer switching in a nanomagnet [J].

Koch, RH ;

Katine, JA ;

Sun, JZ .

PHYSICAL REVIEW LETTERS, 2004, 92 (08)

[10]

Matsunaga S., 2011, 2011 Symposium on VLSI Circuits. Digest of Technical Papers, P298

← 1 2 →