Growth and properties of Ge1-xSix mosaic single crystals for γ-ray lens application

被引:18
作者
Abrosimov, N. V. [1 ]
Luedge, A. [1 ]
Riemann, H. [1 ]
Kurlov, V. N. [2 ]
Borissova, D. [3 ]
Klemm, V. [3 ]
Halloin, H. [4 ]
von Ballmoos, P. [4 ]
Bastie, P. [5 ]
Hamelin, B. [5 ]
Smither, R. K. [6 ]
机构
[1] Inst Crystal Growth, D-12489 Berlin, Germany
[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
[3] Freiberg Univ Min & Technol, Inst Mat Sci, D-09599 Freiberg, Germany
[4] Ctr Etud Spatiale Rayonnements, F-31029 Toulouse, France
[5] Inst Max Von Laue Paul Langevin, F-38042 Grenoble, France
[6] Argonne Natl Lab, Argonne, IL 60439 USA
关键词
Crystal structure; Interfaces; Solid solutions; Czochralski method; Germanium silicon alloys; Mosaicc rystals;
D O I
10.1016/j.jcrysgro.2004.11.110
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Bulk crystals of Ge1-xSix solid solutions grown by modified Czochralski (CZ) technique were used for the production of the diffraction optics elements of the high-energy gamma-ray telescope. The mosaic crystals were grown to improve the diffraction efficiency of the crystal lens. For developing growth methods for such crystals, the shape of the growth interface, the striation pattern of the distribution of the components and the mosaic structure must be known. Applying the lateral photovoltage scanning (LPS) method and optical microscopy their mosaic structure and shapes of the growth interface have been determined. In this paper, the first attempt was made to find the correlation between crystal structure, mosaicity and diffraction efficiency of Ge1-xSix-based gamma-ray optical elements. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:E495 / E500
页数:6
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