Microstructural and analytical investigation of low temperature crystallized amorphous silicon/crystallized silicon interface using SEM and EDS

The microstructural and analytical investigation of low temperature crystallized amorphous silicon/crystallized silicon interface was presented using scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The plasma enhanced chemical vapor deposition (PECVD) grown α-Si:H film was crystallized into polycrystalline silicon using aluminum induced crystallization (AIC) with a very smooth and uniform interface structure. The analysis suggested the use of AIC process for making p-n junction devices with less interface state densities.