28 Gb/s direct modulation heterogeneously integrated C-band InP/SOI DFB laser

被引:24
作者
Abbasi, Amin [1 ]
Verbist, Jochem [1 ,2 ]
Van Kerrebrouck, Joris [2 ]
Lelarge, Francois [3 ]
Duan, Guang-Hua [3 ]
Yin, Xin [2 ]
Bauwelinck, Johan [2 ]
Roelkens, Gunther [1 ]
Morthier, Geert [1 ]
机构
[1] Univ Ghent, IMEC, INTEC, Photon Res Grp, B-9000 Ghent, Belgium
[2] Univ Ghent, iMinds, IMEC, INTEC,Design Grp, B-9000 Ghent, Belgium
[3] III V Lab, Joint Lab Alcatel Lucent Bell Labs France Thales, F-91767 Palaiseau, France
关键词
Single mode fibers - Semiconducting indium phosphide - III-V semiconductors - Indium phosphide - Modulation;
D O I
10.1364/OE.23.026479
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate direct modulation of a heterogeneously integrated C-band DFB laser on SOI at 28 Gb/s with a 2 dB extinction ratio. This is the highest direct modulation bitrate so far reported for a membrane laser coupled to an SOI waveguide. The laser operates single mode with 6 mW output power at 100 mA bias current. The 3 dB modulation bandwidth is 15 GHz. Transmission experiments using a 2 km non zero dispersion shifted single mode fiber were performed at 28 Gb/s bitrate using a 2(7)-1 NRZ-PRBS pattern resulting in a 1 dB power penalty. (C) 2015 Optical Society of America
引用
收藏
页码:26479 / 26485
页数:7
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