Modeling of Reverse Subthreshold Currents in The A-Si:H TFTs

被引：0

作者：

Liu, Yuan ^{[1
]}

En, Yun-Fei ^{[1
]}

He, Yu-Juan ^{[1
]}

Shi, Qian ^{[1
]}

机构：

[1] China Elect Produce Reliabil & Environm Testing R, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou, Guangdong, Peoples R China

来源：

PROCEEDINGS OF 2013 INTERNATIONAL CONFERENCE ON QUALITY, RELIABILITY, RISK, MAINTENANCE, AND SAFETY ENGINEERING (QR2MSE), VOLS I-IV | 2013年

基金：

中国博士后科学基金;

关键词：

amorphous silicon; thin film transistor; band bending; reverse subthreshold current; THIN-FILM TRANSISTORS; LEAKAGE CURRENTS; MOSFETS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper proposed a physical model for reverse subthreshold currents in the amorphous silicon thin film transistors. Firstly, an approximation for the band bending in the back interface as a function of gate-source voltage is derived. By considering of deep states, a current model based on electron conduction in the back channel is then developed. Finally, the proposed model was verified using the experimental data.

引用

页码：1110 / 1112

页数：3

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