A Fully-Integrated Ka-band CMOS Power Amplifier with Psat of 20 dBm and PAF, of 19%

被引：0
|
作者：
Huang, Yong [1 ]
Zhang, Runxi [1 ]
Shi, Chunqi [2 ]
机构：
[1] East China Normal Univ, Inst Microelect Circuits & Syst, Shanghai 200241, Peoples R China
[2] East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai, Peoples R China
来源：
2016 IEEE INTERNATIONAL CONFERENCE ON UBIQUITOUS WIRELESS BROADBAND (ICUWB2016) | 2016年
基金：
中国国家自然科学基金;
关键词：
CMOS; Ka-band; power amplifier; balun;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 27.5-28.5 GHz Ka-band power amplifier fabricated with 0.13 gm CMOS process. A small inter-stage inductor between the cascode common-source and common-gate is designed to improve PA's output power and PAE. A vertical coupling input and output balun with low insertion loss are designed to simultaneously perform impedance transformation and differential to single-ended conversion. The power amplifier achieves a saturated output power (Psat) of 20 dBm and a maximum power gain (G) of 22.6 dB, the peak value of the power added efficiency (PAE) is 19 %.
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页数：4
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