A Fully-Integrated Ka-band CMOS Power Amplifier with Psat of 20 dBm and PAF, of 19%

被引：0
|
作者：
Huang, Yong [1 ]
Zhang, Runxi [1 ]
Shi, Chunqi [2 ]
机构：
[1] East China Normal Univ, Inst Microelect Circuits & Syst, Shanghai 200241, Peoples R China
[2] East China Normal Univ, Shanghai Key Lab Multidimens Informat Proc, Shanghai, Peoples R China
来源：
2016 IEEE INTERNATIONAL CONFERENCE ON UBIQUITOUS WIRELESS BROADBAND (ICUWB2016) | 2016年
基金：
中国国家自然科学基金;
关键词：
CMOS; Ka-band; power amplifier; balun;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 27.5-28.5 GHz Ka-band power amplifier fabricated with 0.13 gm CMOS process. A small inter-stage inductor between the cascode common-source and common-gate is designed to improve PA's output power and PAE. A vertical coupling input and output balun with low insertion loss are designed to simultaneously perform impedance transformation and differential to single-ended conversion. The power amplifier achieves a saturated output power (Psat) of 20 dBm and a maximum power gain (G) of 22.6 dB, the peak value of the power added efficiency (PAE) is 19 %.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] An X to Ka-Band Fully-integrated Stacked Power Amplifier in 45 nm CMOS SOI Technology
    Helmi, Sultan R.
    Chen, Jing-Hwa
    Mohammadi, Saeed
    2014 IEEE 14TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2014, : 74 - 76
  • [2] A Fully-integrated Ka-band Stacked Power Amplifier in 45nm CMOS SOI Technology
    Chen, Jing-Hwa
    Helmi, Sultan R.
    Mohammadi, Saeed
    2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 75 - 77
  • [3] A Fully-Integrated Ka-Band CMOS Rectifier Using Large Signal Analysis for Wireless Power Transfer
    Yang, Junhyuk
    Jang, Seonhye
    Park, Hong Soo
    Lee, Kanghyeok
    Hong, Ha Young
    Lee, Wonwoo
    Jo, Semin
    Hong, Sun K.
    Lee, Hojin
    Park, Changkun
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (07) : 911 - 914
  • [4] A Highly Compact, 16.8 dBm Psat Ka-band Power Amplifier in 250 nm SiGe:C BiCMOS
    Somesanu, Iancu
    Schumacher, Hermann
    2017 IEEE NORDIC CIRCUITS AND SYSTEMS CONFERENCE (NORCAS): NORCHIP AND INTERNATIONAL SYMPOSIUM OF SYSTEM-ON-CHIP (SOC), 2017,
  • [5] A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier
    Aoki, Ichiro
    Kee, Scott
    Magoon, Rahul
    Aparicio, Roberto
    Bohn, Florian
    Zachan, Jeff
    Hatcher, Geoff
    McClymont, Donald
    Hajimiri, Ali
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (12) : 2747 - 2758
  • [6] A symmetrical fully-integrated CMOS doherty power amplifier
    Ebazadeh, Samira
    Meghdadi, Masoud
    Medi, Ali
    MICROELECTRONICS JOURNAL, 2024, 148
  • [7] Ka-Band 3-Stack Power Amplifier with 18.8 dBm Psat and 23.4 % PAE Using 22nm CMOS FDSOI Technology
    Aikio, Janne P.
    Hietanen, Mikko
    Tervo, Nuutti
    Rahkonen, Timo
    Parssinen, Aarno
    2019 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR), 2019, : 79 - 81
  • [8] A High-Psat High-OP1dB High-Power-Density Fully Integrated Ka-Band Power Amplifier in 0.18-μm CMOS
    Wang, To-Po
    Li, Zong-Wei
    Hsueh, Ching-Yung
    2012 IEEE INTERNATIONAL CONFERENCE ON WIRELESS INFORMATION TECHNOLOGY AND SYSTEMS (ICWITS), 2012,
  • [9] A 20 dBm fully-integrated 60 GHz SiGe power amplifier with automatic level control
    Pfeiffer, Ullrich R.
    Goren, David
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (07) : 1455 - 1463
  • [10] A Ka-band LTCC integrated 22-dBm MMIC power-amplifier module
    Kim, DJ
    Yoon, KS
    Park, CS
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2003, 38 (06) : 455 - 457
12345