Hole-phonon energy loss rate in boron doped silicon
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作者:
Richardson-Bullock, J. S.
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Richardson-Bullock, J. S.
[1
]
Prest, M. J.
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Prest, M. J.
[1
]
Prunnila, M.
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机构:Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Prunnila, M.
Gunnarsson, D.
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机构:Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Gunnarsson, D.
Shah, V. A.
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Shah, V. A.
[1
]
Dobbie, A.
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Dobbie, A.
[1
]
Myronoy, M.
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Myronoy, M.
[1
]
Morris, R. J. H.
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Morris, R. J. H.
[1
]
Whall, T. E.
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Whall, T. E.
[1
]
Parker, E. H. C.
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Parker, E. H. C.
[1
]
Leadley, D. R.
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Leadley, D. R.
[1
]
机构:
[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源:
2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS)
|
2013年
关键词:
Hole;
Electron;
Phonon;
Coupling;
Energy Loss Rate;
REFRIGERATION;
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.