Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

被引：7
作者：
Jiao, Teng [1 ]
Chen, Wei [1 ]
Li, Zhengda [1 ]
Diao, Zhaoti [1 ]
Dang, Xinming [1 ]
Chen, Peiran [1 ]
Dong, Xin [1 ]
Zhang, Yuantao [1 ]
Zhang, Baolin [1 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Qianjin St 2699, Changchun 130012, Peoples R China
来源：
MATERIALS | 2022年 / 15卷 / 23期
关键词：
Ga2O3; Schottky barrier diodes; heterojunction; MOCVD; NICKEL-OXIDE FILMS; BAND ALIGNMENT; BETA-GA2O3;
D O I：
10.3390/ma15238280
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of unintentional impurities in the films was studied. Then nickel Schottky barrier diode and p-NiO/n-Ga2O3 heterojunction diode were fabricated and measured. Without any electric field management structure, the Schottky barrier diode and heterojunction diode have specific resistances of 3.0 m omega center dot cm(2) and 6.2 m omega center dot cm(2), breakdown voltages of 380 V and 740 V, thus yielding power figures of merit of 48 MW center dot cm(-2) and 88 MW center dot cm(-2), respectively. Besides, both devices exhibit a current on/off ratio of more than 10(10). This shows the prospect of MOCVD in power device manufacture.
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页数：9
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