Ultrafast Photodetection in the Quantum Wells of Single AlGaAs/GaAs-Based Nanowires

被引:40
作者
Erhard, N. [1 ,3 ]
Zenger, S. [1 ]
Morkoetter, S. [1 ]
Rudolph, D. [1 ]
Weiss, M. [3 ,4 ]
Krenner, H. J. [3 ,4 ]
Karl, H. [4 ]
Abstreiter, G. [1 ,2 ,3 ]
Finley, J. J. [1 ,3 ]
Koblmueller, G. [1 ]
Holleitner, A. W. [1 ,3 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst & Phys Dept, D-85748 Garching, Germany
[2] Tech Univ Munich, Inst Adv Study, D-85748 Garching, Germany
[3] NIM, D-80799 Munich, Germany
[4] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany
关键词
GaAs/AlGaAs-core-shell nanowires; quantum well; ultrafast photodetector; ultrafast photoswitch; CORE-SHELL NANOWIRES; ROOM-TEMPERATURE; SEMICONDUCTOR NANOWIRES; PHOTON SOURCE; SOLAR-CELLS; TRANSPORT; EMISSION; CURRENTS; DOT; GENERATION;
D O I
10.1021/acs.nanolett.5b02766
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs core-shell nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photothermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors.
引用
收藏
页码:6869 / 6874
页数:6
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