Electronic and optical properties of van der Waals vertical heterostructures based on two-dimensional transition metal dichalcogenides: First-principles calculations

被引:70
作者
Ren, Kai [1 ]
Sun, Minglei [2 ]
Luo, Yi [3 ]
Wang, Sake [4 ]
Xu, Yujing [2 ]
Yu, Jin [3 ]
Tang, Wencheng [1 ]
机构
[1] Southeast Univ, Sch Mech Engn, Nanjing 211189, Jiangsu, Peoples R China
[2] KAUST, Phys Sci & Engn Div PSE, Thuwal 239556900, Saudi Arabia
[3] Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Jiangsu, Peoples R China
[4] Jinling Inst Technol, Coll Sci, Nanjing 211169, Jiangsu, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
Two-dimensional transition metal dichalcogenides; First-principles calculations; Heterostructures; Optical absorption; Application; MAGNETIC-PROPERTIES; GALLIUM NITRIDE; MOS2; MONOLAYER; GROUP-IV; STRAIN; GRAPHENE; LAYER; BILAYER; WSE2; PHOSPHORENE/GRAPHENE;
D O I
10.1016/j.physleta.2019.01.060
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Four vertical heterostructures based on two-dimensional transition-metal dichalcogenides (TMDs) - MoS2/GeC, MoSe2/GeC, WS2/GeC, and WSe2/GeC, were studied by density functional theory calculations to investigate their structure, electronic characteristics, principle of photogenerated electron-hole separation, and optical-absorption capability. The optimized heterostructures were formed by van der Waals (vdW) forces and without covalent bonding. Their most stable geometric configurations and band structures display type-II band alignment, which allows them to spontaneously separate photogenerated electrons and holes. The charge difference and built-in electric field across the interface of these vdW heterostructures also contribute to preventing the photogenerated electron-hole recombination. Finally, the high optical absorption of the four TMD-based vdW heterostructures in the visible and near-infrared regions indicates their suitability for photocatalytic, photovoltaic, and optical devices. (C) 2019 Published by Elsevier B.V.
引用
收藏
页码:1487 / 1492
页数:6
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