Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

被引：10

作者：

Kong Xin ^{[1
]}

Wei Ke ^{[1
]}

Liu Guo-Guo ^{[1
]}

Liu Xin-Yu ^{[1
]}

机构：

[1] Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Key Lab Microelect Device & Integrated Technol, Inst Microelect, Beijing 100092, Peoples R China

来源：

CHINESE PHYSICS B | 2012年 / 21卷 / 12期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN HEMT; breakdown characteristics; millimeter-wave; U-type gate foot; ELECTRON-MOBILITY TRANSISTORS; SIMULATION; GANHEMTS; W/MM;

D O I：

10.1088/1674-1056/21/12/128501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications.

引用

页数：7

共 25 条

[1] Simulation of AlGaN/GaN HEMTs' breakdown voltage enhancement using grating field plates [J].

Bahat-Treidel, E. ;

Sidorov, V. ;

Wuerfl, J. ;

Traenkle, G. .

SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, :277-280

[2] Fabrication and characterization of high breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire substrates [J].

Choi, Y. C. ;

Pophristic, M. ;

Peres, B. ;

Spencer, M. G. ;

Eastman, L. F. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06) :2601-2605

[3] V-gate GaNHEMTs for X-band power applications [J].

Chu, Rongming ;

Shen, Likun ;

Fichtenbaum, Nicholas ;

Brown, David ;

Chen, Zhen ;

Keller, Stacia ;

DenBaars, Steven P. ;

Mishra, Umesh K. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (09) :974-976

[4] High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates [J].

Dora, Y. ;

Chakraborty, A. ;

McCarthy, L. ;

Keller, S. ;

DenBaars, S. P. ;

Mishra, U. K. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) :713-715

[5] Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries [J].

Farahmand, M ;

Garetto, C ;

Bellotti, E ;

Brennan, KF ;

Goano, M ;

Ghillino, E ;

Ghione, G ;

Albrecht, JD ;

Ruden, PP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :535-542

[6] Aspect Ratio Impact on RF and DC Performance of State-of-the-Art Short-Channel GaN and InGaAs HEMTs [J].

Guerra, Diego ;

Akis, Richard ;

Marino, Fabio A. ;

Ferry, David K. ;

Goodnick, Stephen M. ;

Saraniti, Marco .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) :1217-1219

[7] Physics-based numerical simulation and device characterizations of AlGaN/GaN HEMTs with temperature effects [J].

Huq, Hasina F. ;

Polash, Bashirul .

MICROELECTRONICS JOURNAL, 2011, 42 (06) :923-928

[8] Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-Gate devices [J].

Jessen, Gregg H. ;

Fitch, Robert C., Jr. ;

Gillespie, James K. ;

Via, Glen ;

Crespo, Antonio ;

Langley, Derrick ;

Denninghoff, Daniel J. ;

Trejo, Manuel, Jr. ;

Heller, Eric R. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) :2589-2597

[9]

Kaddeche M, 2009, INT C SIGN CIRC SYST, P1

[10]

Kikkawa T, 2007, COMP SEM INT CIRC S, P1

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