The effect of antimony-doping on Ge2Sb2Te5, a phase change material

被引：40
作者：
Choi, Kyu-Jeong [1 ]
Yoon, Sung-Min [1 ]
Lee, Nam-Yeal [1 ]
Lee, Seung-Yun [1 ]
Park, Young-Sam [1 ]
Yu, Byoung-Gon [1 ]
Ryu, Sang-Ouk [2 ]
机构：
[1] ETRI, IT Convergence & Components Lab, Taejon 305700, South Korea
[2] Dankook Univ, Dept Elect Engn, Chungnam 330714, South Korea
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 23期
关键词：
Phase change memory; Phase transition; Ge2Sb2Te5; excess-Sb Ge2Sb2+xTe5;
D O I：
10.1016/j.tsf.2008.02.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural and electrical resistance properties of excess-Sb Ge2Sb2+xTe5 (Sb-GST) films were investigated. As the Sb-doping concentration was increased, the face center cubic structure of Sb-GST films was no longer observed, at Sb concentrations exceeding 27%, the amorphous phase directly changed to hexagonal closed-packed structures. The crystallization temperature of the 27% Sb-GST film was 15 degrees C higher than that of the Ge2Sb2Te5 (GST) film. The activation energies of the Sb-GST films also were greater than those of the GST films. These results indicate an increase in the stability of the Sb-doped films in the amorphous state compared with GST films. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：8810 / 8812
页数：3
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