Transparent p-CuI/n-ZnO heterojunction diodes

被引：149
|
作者：
Schein, Friedrich-Leonhard [1 ]
von Wenckstern, Holger [1 ]
Grundmann, Marius [1 ]
机构：
[1] Univ Leipzig, Inst Expt Phys 2, Fak Phys & Geowissensch, D-04103 Leipzig, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 09期
关键词：
THIN-FILM TRANSISTORS;
D O I：
10.1063/1.4794532
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transparent and electrically conducting p-type copper(I)-iodide thin-films form highly rectifying p-CuI/n-ZnO diodes. Sputtered copper thin films on glass were transformed into polycrystalline gamma-CuI by exposing them to iodine vapor. The electrical parameters extracted from Hall effect are p = 5 x 10(18) cm(-3); mu(h,Hall) = 6 cm(2)/Vs, and rho = 0.2 Omega cm for hole concentration, mobility, and electrical resistivity, respectively. Heterostructures consisting of p-CuI and pulsed-laser deposited n-ZnO were fabricated on a-plane sapphire substrates. The p-CuI/n-ZnO diode exhibits a current rectification ratio of 6 x 10(6) at +/- 2V and an ideality factor of eta = 2.14. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794532]
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页数：4
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