Transparent p-CuI/n-ZnO heterojunction diodes

被引：149

作者：

Schein, Friedrich-Leonhard ^{[1
]}

von Wenckstern, Holger ^{[1
]}

Grundmann, Marius ^{[1
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, Fak Phys & Geowissensch, D-04103 Leipzig, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 09期

关键词：

THIN-FILM TRANSISTORS;

D O I：

10.1063/1.4794532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent and electrically conducting p-type copper(I)-iodide thin-films form highly rectifying p-CuI/n-ZnO diodes. Sputtered copper thin films on glass were transformed into polycrystalline gamma-CuI by exposing them to iodine vapor. The electrical parameters extracted from Hall effect are p = 5 x 10(18) cm(-3); mu(h,Hall) = 6 cm(2)/Vs, and rho = 0.2 Omega cm for hole concentration, mobility, and electrical resistivity, respectively. Heterostructures consisting of p-CuI and pulsed-laser deposited n-ZnO were fabricated on a-plane sapphire substrates. The p-CuI/n-ZnO diode exhibits a current rectification ratio of 6 x 10(6) at +/- 2V and an ideality factor of eta = 2.14. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794532]

引用

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