Design of hybrid MoS2/photonic devices compatible with technological constraints

被引:1
作者
Dory, Jean-Baptiste [1 ,2 ]
Gauthier-Lafaye, Olivier [2 ]
Dubreuil, Pascal [2 ]
Massiot, Ines [2 ]
Calvez, Stephane [2 ]
Mlayah, Adnen [1 ,2 ]
机构
[1] Univ Toulouse, CNRS, CEMES CNRS, UPS, Toulouse, France
[2] Univ Toulouse, CNRS, LAAS CNRS, UPS, Toulouse, France
关键词
MoS2; monolayer; photonic; optical cavities; resonant gratings; 2D materials; integration; TRANSITION-METAL DICHALCOGENIDES; MONOLAYER MOS2; PHOTOLUMINESCENCE; ABSORPTION; RESONANCE; LIGHT; MODE; ENCAPSULATION; FORMULATION; EMISSION;
D O I
10.1088/2053-1591/ac5273
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The integration of transition metal dichalcogenide layers into photonic devices is a current challenge in the field of 2D materials. Based on numerical simulations, this work explores the design of devices combining an MoS2 monolayer with planar photonic gratings sustaining localized optical resonances. A special attention is paid to the technological constraints. The optical response of six devices is compared taking into account the limitations imposed by the growth conditions of the MoS2 layer and the processing of the resonant optical gratings. The reported photonic devices composed of grating filters and a backside reflector on silicon and silica substrates exhibit a theoretical absorption by the MoS2 layer between 85 and 99% at 532 nm. The numerical simulations further show that the addition of an Al2O3 encapsulation layer, to protect the MoS2 monolayer, results in an increase of the performance of the devices. These hybrid MoS2 based photonic devices are promising technological platforms for the study of the optical properties of integrated MoS2 monolayers.
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页数:7
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