An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications

被引：50

作者：

Prado, Edemar O. ^{[1
,2
]}

Bolsi, Pedro C. ^{[1
,2
]}

Sartori, Hamiltom C. ^{[2
]}

Pinheiro, Jose R. ^{[1
,2
]}

机构：

[1] Univ Fed Bahia, Energy Efficiency Lab, LABEFEA, BR-40170110 Salvador, BA, Brazil

[2] Univ Fed Santa Maria, GEPOC, Power Elect & Control Res Grp, BR-97105900 Santa Maria, RS, Brazil

来源：

ENERGIES | 2022年 / 15卷 / 14期

关键词：

comparative analysis; GaN; power MOSFET; power electronics; SiC; DC-DC CONVERTER; SILICON-CARBIDE MOSFETS; OPTIMAL-DESIGN; LOSS MODEL; EFFICIENCY; PERFORMANCE; DEVICES; HEMT;

D O I：

10.3390/en15145244

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage of 400 V, power levels from 1 kW to 16 kW (1 A-40 A) and frequencies from 1 kHz to 500 kHz. A methodology for selecting power MOSFETs in power electronics applications is also presented.

引用

页数：17

共 65 条

[1]

Alharbi S.S., 2018, P 2018 IEEE INT C EL, P384, DOI DOI 10.1109/EIT.2018.8500116

[2]

Avila A, 2017, EUR CONF POW ELECTR

[3] Gallium nitride devices for power electronic applications [J].

Baliga, B. Jayant .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (07)

[4]

Beltrame F, 2013, IEEE IND ELEC, P706, DOI 10.1109/IECON.2013.6699221

[5] Optimal Design of a Compact 99.3% Efficient Single-Phase PFC Rectifier [J].

Biela, J. ;

Kolar, J. W. ;

Deboy, G. .

2010 TWENTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2010, :1397-1404

[6] Impact of Power Density Maximization on Efficiency of DC-DC Converter Systems [J].

Biela, Juergen ;

Badstuebner, Uwe ;

Kolar, Johann W. .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2009, 24 (1-2) :288-300

[7] LCL Filter Parameter and Hardware Design Methodology for Minimum Volume Considering Capacitor Lifetimes [J].

Bolsi, Pedro C. ;

Prado, Edemar O. ;

Sartori, Hamiltom C. ;

Lenz, Joao Manuel ;

Pinheiro, Jose Renes .

ENERGIES, 2022, 15 (12)

[8]

Bolsi PC, 2018, INT CONF IND APPL, P1100, DOI 10.1109/INDUSCON.2018.8627236

[9] Modeling the switching performance of a MOSFET in the high side of a non-isolated buck converter [J].

Brown, J .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2006, 21 (01) :3-10

[10]

Buetow S, 2018, PROC INT SYMP POWER, P196, DOI 10.1109/ISPSD.2018.8393636

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