Biaxial strain modulated valence-band engineering in III-V digital alloys

被引:3
|
作者
Ahmed, Sheikh Z. [1 ]
Tan, Yaohua [2 ]
Zheng, Jiyuan [3 ]
Campbell, Joe C. [1 ]
Ghosh, Avik W. [1 ,4 ]
机构
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Synopsys Inc, Mountain View, CA 94043 USA
[3] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol, Beijing 100084, Peoples R China
[4] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA
基金
美国国家科学基金会;
关键词
EXCESS NOISE; AVALANCHE PHOTODIODES; GAP; DIAMOND; GAAS;
D O I
10.1103/PhysRevB.106.035301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A series of III-V digital alloy avalanche photodiodes have been recently seen to exhibit very low excess noise. These alloys have low hole ionization coefficients due to enhanced effective mass, a large separation between light-hole and split-off bands in the valence band, and in one case (InAlAs), potentially the creation of a small minigap in computed band structures. Whereas such minigaps would indeed provide a reliable way to suppress hole transport and reduce excess noise, their physical origin is explored here. In this paper, we provide an explanation for the formation of the minigaps as arising from oscillations in certain orbital overlaps. We demonstrate that decreasing the substrate lattice constant would increase the minigap size and mass in the transport direction. This leads to reduced quantum tunneling and phonon scattering of the holes. Finally, we illustrate the band-structure modification with substrate lattice constant for other III-V digital alloys. We, thus, provide a recipe for deterministic engineering of sizable valence-band minigaps as a potential recipe for high gain avalanche photodiodes.
引用
收藏
页数:11
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