共 50 条
- [34] MODIFICATION OF HETEROJUNCTION BAND OFFSETS AT III-V/IV/III-V INTERFACES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1628 - 1637
- [35] A Comprehensive Modeling Approach of Electronic Properties in III-V Digital Alloys 2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021), 2021, : 138 - 140
- [37] Development of Low Noise III-V Digital Alloys for Improved Photodetection 2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2021,
- [39] Defect engineering in III-V ternary alloys: effects of strain and local charge on the formation of vacancies and antisites. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1455 - 1456
- [40] Defect engineering in III-V ternary alloys: Effects of strain and local charge on the formation of native deep defects NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 : 229 - 233