Engineering Interlayer Electron-Phonon Coupling in WS2/BN Heterostructures

被引：15

作者：

Li, Yifei ^{[1
]}

Zhang, Xiaowei ^{[2
,3
]}

Wang, Jinhuan ^{[4
,5
]}

Ma, Xiaoli ^{[6
]}

Shi, Jin-An ^{[7
]}

Guo, Xiangdong ^{[8
]}

Zuo, Yonggang ^{[9
]}

Li, Ruijie ^{[1
]}

Hong, Hao ^{[4
,5
]}

Li, Ning ^{[2
,10
]}

Xu, Kai ^{[7
]}

Huang, Xinyu ^{[11
]}

Tian, Huifeng ^{[1
]}

Yang, Ying ^{[12
]}

Yao, Zhixin ^{[1
,13
]}

Liao, PeiChi ^{[1
]}

Li, Xiao ^{[12
]}

Guo, Junjie ^{[13
]}

Huang, Yuang ^{[11
]}

Gao, Peng ^{[2
,10
,14
]}

Wang, Lifen ^{[6
,15
]}

Yang, Xiaoxia ^{[8
]}

Dai, Qing ^{[8
]}

Wang, EnGe ^{[2
,14
,15
,16
]}

Liu, Kaihui ^{[4
,5
,14
]}

Zhou, Wu ^{[7
,17
]}

Yu, Xiaohui ^{[6
,15
]}

Liang, Liangbo ^{[18
]}

Jiang, Ying ^{[2
,14
]}

Li, Xin-Zheng ^{[3
,14
]}

Liu, Lei ^{[1
,14
]}

机构：

[1] Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China

[2] Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China

[3] Peking Univ, Frontiers Sci Ctr Nanooptoelect, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[4] Peking Univ, State Key Lab Mesoscop Phys, Collaborat Innovat Ctr Quantum Matter, Sch Phys, Beijing 100871, Peoples R China

[5] Peking Univ, Frontiers Sci Ctr Nanooptoelect, Collaborat Innovat Ctr Quantum Matter, Sch Phys, Beijing 100871, Peoples R China

[6] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[7] Univ Chinese Acad Sci, Sch Phys Sci, CAS Key Lab Vacuum Phys, Beijing 100049, Peoples R China

[8] Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanophoton Mat & Devices, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China

[9] Kunming Univ Sci & Technol, Fac Met & Energy Engn, Key Lab Unconvent Met, Minist Educ, Kunming 650093, Yunnan, Peoples R China

[10] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

[11] Beijing Inst Technol, Adv Res Inst Multidisciplinary Sci, Beijing 100081, Peoples R China

[12] Nanjing Normal Univ, Ctr Quantum Transport & Thermal Energy Sci, Sch Phys & Technol, Nanjing 210023, Peoples R China

[13] Taiyuan Univ Technol, Key Lab Interface Sci & Engn Adv Mat, Minist Educ, Taiyuan 030024, Peoples R China

[14] Peking Univ, Interdisciplinary Inst Light Element Quantum Mat, Beijing 100871, Peoples R China

[15] Songshan Lake Mat Lab, Dongguan 523808, Peoples R China

[16] Liaoning Univ, Sch Phys, Shenyang 110036, Peoples R China

[17] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100049, Peoples R China

[18] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

来源：

NANO LETTERS | 2022年 / 22卷 / 07期

基金：

中国国家自然科学基金; 北京市自然科学基金; 国家重点研发计划;

关键词：

vdW heterostructure; isotope engineering; high-pressure engineering; electron-phonon coupling; interlayer spacing;

D O I：

10.1021/acs.nanolett.1c04598

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In van der Waals (vdW) heterostructures, the interlayer electron-phonon coupling (EPC) provides one unique channel to nonlocally engineer these elementary particles. However, limited by the stringent occurrence conditions, the efficient engineering of interlayer EPC remains elusive. Here we report a multitier engineering of interlayer EPC in WS2/boron nitride (BN) heterostructures, including isotope enrichments of BN substrates, temperature, and high-pressure tuning. The hyperfine isotope dependence of Raman intensities was unambiguously revealed. In combination with theoretical calculations, we anticipate that WS2/BN supercells could induce Brillouin-zone-folded phonons that contribute to the interlayer coupling, leading to a complex nature of broad Raman peaks. We further demonstrate the significance of a previously unexplored parameter, the interlayer spacing. By varying the temperature and high pressure, we effectively manipulated the strengths of EPC with on/off capabilities, indicating critical thresholds of the layer-layer spacing for activating and strengthening interlayer EPC. Our findings provide new opportunities to engineer vdW heterostructures with controlled interlayer coupling.

引用

页码：2725 / 2733

页数：9

共 38 条

[1] Symmetry-Dependent Exciton-Phonon Coupling in 2D and Bulk MoS2 Observed by Resonance Raman Scattering [J].

Carvalho, Bruno R. ;

Malard, Leandro M. ;

Alves, Juliana M. ;

Fantini, Cristiano ;

Pimenta, Marcos A. .

PHYSICAL REVIEW LETTERS, 2015, 114 (13)

[2] Symmetry-Controlled Electron-Phonon Interactions in van der Waals Heterostructures [J].

Chen, Chen ;

Chen, Xiaolong ;

Yu, Hongyi ;

Shao, Yuchuan ;

Guo, Qiushi ;

Deng, Bingchen ;

Lee, Sungmin ;

Ma, Chao ;

Watanabe, Kenji ;

Taniguchi, Takashi ;

Park, Je-Geun ;

Huang, Shengxi ;

Yao, Wang ;

Xia, Fengnian .

ACS NANO, 2019, 13 (01) :552-559

[3] Unusual Exciton-Phonon Interactions at van der Waals Engineered Interfaces [J].

Chow, Colin M. ;

Yu, Hongyi ;

Jones, Aaron M. ;

Yan, Jiaqiang ;

Mandrus, David G. ;

Taniguchi, Takashi ;

Watanabe, Kenji ;

Yao, Wang ;

Xu, Xiaodong .

NANO LETTERS, 2017, 17 (02) :1194-1199

[4] Isotopic Disorder: The Prevailing Mechanism in Limiting the Phonon Lifetime in Hexagonal BN [J].

Cusco, Ramon ;

Edgar, James H. ;

Liu, Song ;

Li, Jiahan ;

Artus, Luis .

PHYSICAL REVIEW LETTERS, 2020, 124 (16)

[5] Influence of isotopic substitution on the anharmonicity of the interlayer shear mode of h-BN [J].

Cusco, Ramon ;

Edgar, James H. ;

Liu, Song ;

Cassabois, Guillaume ;

Gil, Bernard ;

Artus, Luis .

PHYSICAL REVIEW B, 2019, 99 (08)

[6] Isotopic effects on phonon anharmonicity in layered van der Waals crystals: Isotopically pure hexagonal boron nitride [J].

Cusco, Ramon ;

Artus, Luis ;

Edgar, James H. ;

Liu, Song ;

Cassabois, Guillaume ;

Gil, Bernard .

PHYSICAL REVIEW B, 2018, 97 (15)

[7] Temperature dependence of Raman-active phonons and anharmonic interactions in layered hexagonal BN [J].

Cusco, Ramon ;

Gil, Bernard ;

Cassabois, Guillaume ;

Artus, Luis .

PHYSICAL REVIEW B, 2016, 94 (15)

[8] Strong and tunable interlayer coupling of infrared-active phonons to excitons in van der Waals heterostructures [J].

Du, Luojun ;

Zhao, Yanchong ;

Jia, Zhiyan ;

Liao, Mengzhou ;

Wang, Qinqin ;

Guo, Xiangdong ;

Shi, Zhiwen ;

Yang, Rong ;

Watanabe, Kenji ;

Taniguchi, Takashi ;

Xiang, Jianyong ;

Shi, Dongxia ;

Dai, Qing ;

Sun, Zhipei ;

Zhang, Guangyu .

PHYSICAL REVIEW B, 2019, 99 (20)

[9] Shear-Induced Isostructural Phase Transition and Metallization of Layered Tungsten Disulfide under Nonhydrostatic Compression [J].

Duwal, Sakun ;

Yoo, Choong-Shik .

JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (09) :5101-5107

[10] Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides [J].

Fang, Hui ;

Battaglia, Corsin ;

Carraro, Carlo ;

Nemsak, Slavomir ;

Ozdol, Burak ;

Kang, Jeong Seuk ;

Bechtel, Hans A. ;

Desai, Sujay B. ;

Kronast, Florian ;

Unal, Ahmet A. ;

Conti, Giuseppina ;

Conlon, Catherine ;

Palsson, Gunnar K. ;

Martin, Michael C. ;

Minor, Andrew M. ;

Fadley, Charles S. ;

Yablonovitch, Eli ;

Maboudian, Roya ;

Javey, Ali .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2014, 111 (17) :6198-6202

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