Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

被引：20

作者：

Ning, Honglong ^{[1
]}

Zeng, Xuan ^{[1
]}

Zhang, Hongke ^{[1
]}

Zhang, Xu ^{[1
]}

Yao, Rihui ^{[1
]}

Liu, Xianzhe ^{[2
]}

Luo, Dongxiang ^{[3
,4
]}

Xu, Zhuohui ^{[5
]}

Ye, Qiannan ^{[1
]}

Peng, Junbiao ^{[1
]}

机构：

[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China

[2] Wuyi Univ, Sch Appl Phys & Mat, Res Ctr Flexible Sensing Mat & Devices, Jiangmen 529020, Peoples R China

[3] Guangzhou Univ, Lab Clean Energy & Mat, Guangzhou Key Huangpu Hydrogen Innovat Ctr, Inst Clean Energy & Mat,Sch Chem & Chem Engn, Guangzhou 510006, Peoples R China

[4] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R China

[5] Yulin Normal Univ, Guangxi Key Lab Agr Resources Chem & Biotechnol, Yulin 537000, Peoples R China

来源：

MEMBRANES | 2022年 / 12卷 / 01期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

thin film transistors; flexible; fully transparent; oxide; RESISTANT; TFTS;

D O I：

10.3390/membranes12010029

中图分类号：

Q5 [生物化学]; Q7 [分子生物学];

学科分类号：

071010 ; 081704 ;

摘要：

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (mu(sat)) of 7.9 cm(2)/V center dot s, an I-on/I-off ratio of 4.58 x 10(6), a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

引用

页数：7

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