Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

被引：21

作者：

Ning, Honglong ^{[1
]}

Zeng, Xuan ^{[1
]}

Zhang, Hongke ^{[1
]}

Zhang, Xu ^{[1
]}

Yao, Rihui ^{[1
]}

Liu, Xianzhe ^{[2
]}

Luo, Dongxiang ^{[3
,4
]}

Xu, Zhuohui ^{[5
]}

Ye, Qiannan ^{[1
]}

Peng, Junbiao ^{[1
]}

机构：

[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China

[2] Wuyi Univ, Sch Appl Phys & Mat, Res Ctr Flexible Sensing Mat & Devices, Jiangmen 529020, Peoples R China

[3] Guangzhou Univ, Lab Clean Energy & Mat, Guangzhou Key Huangpu Hydrogen Innovat Ctr, Inst Clean Energy & Mat,Sch Chem & Chem Engn, Guangzhou 510006, Peoples R China

[4] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R China

[5] Yulin Normal Univ, Guangxi Key Lab Agr Resources Chem & Biotechnol, Yulin 537000, Peoples R China

来源：

MEMBRANES | 2022年 / 12卷 / 01期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

thin film transistors; flexible; fully transparent; oxide; RESISTANT; TFTS;

D O I：

10.3390/membranes12010029

中图分类号：

Q5 [生物化学]; Q7 [分子生物学];

学科分类号：

071010 ; 081704 ;

摘要：

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (mu(sat)) of 7.9 cm(2)/V center dot s, an I-on/I-off ratio of 4.58 x 10(6), a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

引用

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