Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

被引：20
|
作者：
Ning, Honglong [1 ]
Zeng, Xuan [1 ]
Zhang, Hongke [1 ]
Zhang, Xu [1 ]
Yao, Rihui [1 ]
Liu, Xianzhe [2 ]
Luo, Dongxiang [3 ,4 ]
Xu, Zhuohui [5 ]
Ye, Qiannan [1 ]
Peng, Junbiao [1 ]
机构：
[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China
[2] Wuyi Univ, Sch Appl Phys & Mat, Res Ctr Flexible Sensing Mat & Devices, Jiangmen 529020, Peoples R China
[3] Guangzhou Univ, Lab Clean Energy & Mat, Guangzhou Key Huangpu Hydrogen Innovat Ctr, Inst Clean Energy & Mat,Sch Chem & Chem Engn, Guangzhou 510006, Peoples R China
[4] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R China
[5] Yulin Normal Univ, Guangxi Key Lab Agr Resources Chem & Biotechnol, Yulin 537000, Peoples R China
来源：
MEMBRANES | 2022年 / 12卷 / 01期
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
thin film transistors; flexible; fully transparent; oxide; RESISTANT; TFTS;
D O I：
10.3390/membranes12010029
中图分类号：
Q5 [生物化学]; Q7 [分子生物学];
学科分类号：
071010 ; 081704 ;
摘要：
Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (mu(sat)) of 7.9 cm(2)/V center dot s, an I-on/I-off ratio of 4.58 x 10(6), a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.
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页数：7
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