Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy

被引：5

作者：

Matsuhata, Hirofumi ^{[1
,2
,7
]}

Sugiyama, Naoyuki ^{[1
,3
]}

Chen, Bin ^{[1
,2
,4
,8
]}

Yamashita, Tamotsu ^{[1
,5
]}

Hatakeyama, Tetsuo ^{[1
,6
]}

Sekiguchi, Takashi ^{[1
,4
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, R&D Partnership Future Power Elect, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[3] Toray Res Ctr Ltd, 3-3-7 Sonoyama, Otsu, Shiga 5208567, Japan

[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[5] Showa Denko Co Ltd, Minato Ku, 1-13-9 Shibadaimon, Tokyo 1058518, Japan

[6] Toshiba Co Ltd, Res & Dev Ctr, Saiwai Ku, 1 Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan

[7] Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, 2-11-16 Yayoi, Tokyo 1138656, Japan

[8] CALTECH, Ctr Phys Biol, MC127-72, Pasadena, CA 91125 USA

来源：

MICROSCOPY | 2017年 / 66卷 / 02期

关键词：

4H-SiC; wafers; epitaxial growth; CVD growth; surface defects; scanning electron microscopy; X-RAY TOPOGRAPHY; CRYSTALLOGRAPHIC DEFECTS; TRIANGULAR DEFECTS; RELIABILITY; FAULTS;

D O I：

10.1093/jmicro/dfw107

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Surface defects on 4H-SiC wafers with an epitaxial layer grown by chemical vapor deposition (CVD) were observed using scanning electron microscopy (SEM). Commercially available epitaxial-wafers with four or eight deg-off surface from the [0001] toward the [11 (2) over bar0] directions were used for this experiment. 3C-SiC particles, triangular-defects, comets, obtuse-triangular-shaped-defects and micro-holes were identified in the SEM images. This paper can be considered as a catalog of SEM images and descriptions of various surface defects for 4H-SiC wafers with a CVD-grown epilayer.

引用

页码：103 / 109

页数：7

共 21 条

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