Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well

被引：14

作者：

Karalic, Matija ^{[1
]}

Mittag, Christopher ^{[1
]}

Tschirky, Thomas ^{[1
]}

Wegscheider, Werner ^{[1
]}

Ensslin, Klaus ^{[1
]}

Ihn, Thomas ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2017年 / 118卷 / 20期

关键词：

BAND-STRUCTURE; ELECTRON; HYBRIDIZATION; TRANSITION; RESONANCE; GRAPHENE; FIELD;

D O I：

10.1103/PhysRevLett.118.206801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance with the presence of a hybridization gap. With an increasing magnetic field, we explore the quantum Hall regime where spin-polarized edge states with the same chirality are either reflected or transmitted at the junction, whereas those of opposite chirality undergo a mixing process, leading to full equilibration along the width of the junction independent of spin. These results lay the foundations for using p-n junctions in InAs/GaSb double quantum wells to probe the transition between the topological quantum spin Hall and quantum Hall states.

引用

页数：5

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