Isotopic mass effects for low-energy channeling in a silicon crystal

被引：1
作者：
Zheng, Li-Ping [1 ,2 ]
Zhu, Zhi-Yuan [1 ]
Li, Yong [1 ]
Yan, Long [1 ]
Zhu, De-Zhang [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2011年 / 166卷 / 11期
关键词：
mass effect; channeling; silicon crystal; CHARGED-PARTICLES; MOLECULAR-DYNAMICS; CARBON NANOTUBES; CRITICAL ANGLES; HEAVY-IONS; DEPENDENCE; ATOMS; DISTRIBUTIONS; RADIATION; PROTONS;
D O I：
10.1080/10420150.2010.502172
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Monte Carlo (MC) simulations have been used to study the low-energy channeling of B-10 and B-11 ions along the [100] axis in Si crystal. MC simulations show that the critical angle Psi(C) approximate to 15.3(keV/E)(1/2) (in degrees) for the channeling of isotopic B-10 ions and Psi(C) = 14.5(keV/E)(1/2) (in degrees) for the channeling of isotopic B-11 ions, where E is the incident energy. This means that (Psi(C) (for 10B ions)/Psi(C for 11B ions)) approximate to (15.3/14.5) approximate to (11/10)(1/2).
引用
收藏
页码：861 / 865
页数：5
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